DocumentCode
2141066
Title
Direct Extraction of the Nonquasi-Static Small-Signal Model of MOSFET´s
Author
Raskin, J.P. ; Gillon, R. ; Dambrine, G. ; Vanhoenacker, D.
Author_Institution
Dept. EECS, Radiation Laboratory, The University of Michigan, Ann Arbor, MI 48109, USA, raskin@engin.umich.edu
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
727
Lastpage
732
Abstract
A new extraction scheme is proposed, which allows to determine all the equivalent circuit elements values from S-parameters measurements at a single bias point in saturation. Exploiting the specific shape of a set of impedance loci, the new procedure uses linear regression techniques to solve the extraction problem. The resulting algorithm is very simple and efficient when compared to optimiser-driven approaches. Taking into account the nonquasi-static (NQS) effects the extracted model allows to characterize the SOI MOSFET´s up to 40 GHz.
Keywords
Boron; Equivalent circuits; Laboratories; Linear regression; MOSFET circuits; Microwave theory and techniques; Nickel; Semiconductor device modeling; Silicon on insulator technology; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338077
Filename
4139164
Link To Document