Title :
An Empirical High-Frequency Large-Signal Model for High-Voltage LDMOS Transistors
Author :
Bengtsson, L. ; Angelov, I. ; Zirath, H. ; Olsson, J.
Author_Institution :
Chalmers University of Technology, Microwave Electronics Laboratory, S-412 96 G?teborg, Sweden. lars@ep.chalmers.se
Abstract :
The Chalmers HEMT and MESFET large-signal model has been extended to model high-voltage LDMOS transistors. The model´s ability to accurately predict harmonics at the output of the transistor makes it very useful in power amplifier designs where efficiency and intermodulation are important quantities. The large-signal performance was evaluated by a power spectrum method in order to get a global picture of the model´s large-signal performance. The models´ benefits, compared to standard MOSFET models, are the simplicity of both the extraction procedure and the implementation into commercial microwave CAE tools.
Keywords :
Computer aided engineering; Consumer electronics; Costs; Laboratories; MOSFET circuits; Microwave transistors; Nonlinear equations; Predictive models; Silicon; Solid modeling;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338078