Title :
Design principles and limitations of integrated silicon bipolar transistor amplifiers for mobile communications
Author :
Rohringer, Norbert ; Schultes, Gerhard ; Kreuzgruber, Peter ; Scholtz, Arpad L.
Author_Institution :
Inst. fuer Nachrichtentechnik und Hochfrequenztechnik, Tech. Univ. Vienna, Austria
Abstract :
A numerical analysis of Class-C amplifiers on the basis of a simple model of the bipolar junction transistor is presented. The trade-off between collector efficiency, power added efficiency, gain, and input impedance of a 250-mW Class-C amplifier on one side and power supply voltage on the other is evaluated. Results are obtained using nonlinear time-domain simulation and optimization without recourse to graphical methods invoking the concept of conduction angle or to piecewise-linear approximations. It is found that, in contrast to other mobile terminal components, a reduction of the Class-C amplifier supply voltage causes lower gain and an increase of the required battery power at constant RF-output power
Keywords :
bipolar integrated circuits; bipolar transistors; elemental semiconductors; equivalent circuits; integrated circuit modelling; mobile radio; nonlinear network synthesis; numerical analysis; power amplifiers; silicon; telecommunication power supplies; time-domain analysis; Class-C amplifiers; Si integrated bipolar transistor amplifiers; bipolar junction transistor; collector efficiency; gain; input impedance; mobile communications; model; nonlinear time-domain simulation; numerical analysis; optimization; power added efficiency; power supply voltage; Batteries; Impedance; Numerical analysis; Optimization methods; Piecewise linear techniques; Power amplifiers; Power supplies; Silicon; Time domain analysis; Voltage;
Conference_Titel :
Vehicular Technology Conference, 1993., 43rd IEEE
Conference_Location :
Secaucus, NJ
Print_ISBN :
0-7803-1267-8
DOI :
10.1109/VETEC.1993.508783
