Laser generation in semiconductors due to high-current picosecond electron beams

Author

Reutova, Anna ; Shunaylov, Sergey ; Yalandin, Michael ; Shpak, Valery ; Bereznoy, Konstantin ; Nasibov, Alexander ; Shapkin, Petr

Author_Institution

Inst. of Electrophys., Ekaterinburg, Russia

fYear

2008

fDate

6-11 July 2008

Firstpage

1

Lastpage

4

Abstract

Laser generation peculiarities in different semiconductor materials (A2B6 compositions) under the action of high-current picosecond electron beams were investigated. Current density on the sample could exceed 800 A/cm². Current pulses shorter than 300 ps FWHM were of special interest. The estimation of the current threshold densities that cause laser generation under such short pulses was given. Laser generation (line widths ~ 7 - 10 nm) in visible range on different samples (ZnSe, ZnCdS, CdS, CdS-CdSe) was obtained. The maximum pulse power of laser radiation exceeded 1000 W.

Keywords

II-VI semiconductors; cadmium compounds; current density; optical pulse generation; semiconductor lasers; spectral line breadth; zinc compounds; CdS; CdS-CdSe; ZnCdS; ZnSe; current density; current threshold densities; high-current picosecond electron beams; laser generation; line widths; pulse power; semiconductor materials; short pulses; Choppers; Collimators; Crystals; Laser beams; Laser excitation; Plasmas; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

High Power Particle Beams (BEAMS), 2008 17th International Conference on

Conference_Location

Xian

Type

conf

Filename

6202893