DocumentCode
2141569
Title
Status and trends in nanoscale Si-based devices and materials
Author
Balestra, F.
Author_Institution
Sinano Inst., UJF, Grenoble, France
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
33
Lastpage
36
Abstract
An overview of the science and technological aspects of Si-based nanodevices relevant to n+4 technology node and beyond is presented in this paper. Nanoscale CMOS and beyond-CMOS devices, based on innovative concepts, technologies and device architectures, are addressed.
Keywords
CMOS integrated circuits; elemental semiconductors; nanoelectronics; silicon; n+4 technology node; nanoscale CMOS; nanoscale Si-based devices; CMOS technology; Germanium silicon alloys; MOSFETs; Materials science and technology; Nanoscale devices; Semiconductor materials; Silicon germanium; Silicon on insulator technology; Strain measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734469
Filename
4734469
Link To Document