Title :
Status and trends in nanoscale Si-based devices and materials
Author_Institution :
Sinano Inst., UJF, Grenoble, France
Abstract :
An overview of the science and technological aspects of Si-based nanodevices relevant to n+4 technology node and beyond is presented in this paper. Nanoscale CMOS and beyond-CMOS devices, based on innovative concepts, technologies and device architectures, are addressed.
Keywords :
CMOS integrated circuits; elemental semiconductors; nanoelectronics; silicon; n+4 technology node; nanoscale CMOS; nanoscale Si-based devices; CMOS technology; Germanium silicon alloys; MOSFETs; Materials science and technology; Nanoscale devices; Semiconductor materials; Silicon germanium; Silicon on insulator technology; Strain measurement; Transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734469
