Extraction of voltage transfer characteristic of inverter based on TSNWFETs

Author

Kang, Yeonsung ; Suk, Sung Dae ; Seo, Kang Il ; Park, Donggun ; Shin, Hyungcheol

Author_Institution

Dept. of EE, Seoul Nat. Univ., Seoul, South Korea

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

43

Lastpage

45

Abstract

In this paper, voltage transfer characteristic (VTC) of inverter based on Twin Silicon Nanowire MOSFETs (TSNWFETs) is extracted. TSNWFETs with 40 nm gate length and 10 nm nanowire diameter are used to construct inverter. Gain, switching threshold voltage, noise margin and transition width are extracted from VTC to show the performance of inverter based on TSNWFETs. In addition, these performance parameters are extracted by varying the supply voltage.

Keywords

MOSFET; elemental semiconductors; invertors; nanowires; semiconductor quantum wires; silicon; TSNWFET; gate length; inverter; nanowire diameter; size 10 nm; size 40 nm; switching threshold voltage; transition width; twin silicon nanowire MOSFET; voltage transfer characteristic; CMOS digital integrated circuits; Circuit noise; Inverters; MOSFETs; Performance gain; Research and development; Silicon; Threshold voltage; Very large scale integration; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734472

Filename

4734472