Title :
Extraction of voltage transfer characteristic of inverter based on TSNWFETs
Author :
Kang, Yeonsung ; Suk, Sung Dae ; Seo, Kang Il ; Park, Donggun ; Shin, Hyungcheol
Author_Institution :
Dept. of EE, Seoul Nat. Univ., Seoul, South Korea
Abstract :
In this paper, voltage transfer characteristic (VTC) of inverter based on Twin Silicon Nanowire MOSFETs (TSNWFETs) is extracted. TSNWFETs with 40 nm gate length and 10 nm nanowire diameter are used to construct inverter. Gain, switching threshold voltage, noise margin and transition width are extracted from VTC to show the performance of inverter based on TSNWFETs. In addition, these performance parameters are extracted by varying the supply voltage.
Keywords :
MOSFET; elemental semiconductors; invertors; nanowires; semiconductor quantum wires; silicon; TSNWFET; gate length; inverter; nanowire diameter; size 10 nm; size 40 nm; switching threshold voltage; transition width; twin silicon nanowire MOSFET; voltage transfer characteristic; CMOS digital integrated circuits; Circuit noise; Inverters; MOSFETs; Performance gain; Research and development; Silicon; Threshold voltage; Very large scale integration; Virtual manufacturing;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734472
