DocumentCode
2141674
Title
Investigation of mobility in twin silicon nanowire MOSFETs (TSNWFETs)
Author
Kim, Junsoo ; Yang, Seungwon ; Jaehong Lee ; Suk, Sung Dae ; Seo, Kangil ; Park, Donggun ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
50
Lastpage
52
Abstract
The transport characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with radius of 5 nm have been investigated. Mobility was estimated by extracting of source/drain resistance.
Keywords
MOSFET; carrier mobility; elemental semiconductors; nanowires; semiconductor quantum wires; silicon; Si; TSNWFET; cylindrical gate; field-effect transistors; mobility; size 5 nm; source-drain resistance; transport characteristics; twin silicon nanowire MOSFET; Controllability; Electric variables; FETs; Fabrication; Lattices; MOSFET circuits; Nanoscale devices; Research and development; Silicon; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734474
Filename
4734474
Link To Document