Title :
Investigation of mobility in twin silicon nanowire MOSFETs (TSNWFETs)
Author :
Kim, Junsoo ; Yang, Seungwon ; Jaehong Lee ; Suk, Sung Dae ; Seo, Kangil ; Park, Donggun ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
The transport characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with radius of 5 nm have been investigated. Mobility was estimated by extracting of source/drain resistance.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; nanowires; semiconductor quantum wires; silicon; Si; TSNWFET; cylindrical gate; field-effect transistors; mobility; size 5 nm; source-drain resistance; transport characteristics; twin silicon nanowire MOSFET; Controllability; Electric variables; FETs; Fabrication; Lattices; MOSFET circuits; Nanoscale devices; Research and development; Silicon; Transmission electron microscopy;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734474
