Title :
Electromigration of 96.5Sn-3Ag-0.5Cu flip-chip solder bumps bonded on substrate pads of Au/Ni/Cu or Cu metallization
Author :
Lai, Yi-Shao ; Lee, Chiu-Wen ; Chiu, Ying-Ta ; Shao, Yu-Hsiu
Author_Institution :
Stress-Reliability Lab., Adv. Semicond. Eng., Inc., Kaohsiung
Abstract :
Designed experiments are conducted in this paper to study the effect of Au/Ni/Cu or Cu substrate pad metallization on the electromigration reliability of 96.5Sn-3Ag-0.5Cu flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy. Electromigration patterns are investigated in solder bumps under a current stressing condition with an average current density of about 5 kA/cm2 at an ambient temperature at 150 degC. Experiments show that test vehicles with Cu metallization exhibit better electromigration reliability compared to those with Au/Ni/Cu metallization. Corresponding failure mechanisms are proposed based on the observations of microstructures inside current stressed solder bumps
Keywords :
copper alloys; current density; electromigration; flip-chip devices; gold alloys; integrated circuit metallisation; integrated circuit reliability; nickel alloys; silver alloys; solders; tin alloys; titanium alloys; 150 C; Au/Ni/Cu metallization; AuNiCu; Cu metallization; SnAgCu; TiNiCu; current density; current stressing condition; electromigration reliability; failure mechanisms; flip-chip solder bumps; under bump metallurgy; Bonding; Current density; Electromigration; Failure analysis; Gold; Metallization; Microstructure; Temperature; Testing; Vehicles;
Conference_Titel :
Electronic Components and Technology Conference, 2006. Proceedings. 56th
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-0152-6
DOI :
10.1109/ECTC.2006.1645717
