Title :
Six-fold improvement in nanotopography sensing via temperature control of a heated atomic force microscope cantilever
Author :
Somnath, Suhas ; Corbin, Elise A. ; King, William P.
Author_Institution :
Dept. of Mech. Sci. & Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
Heated atomic force microscope (AFM) cantilevers can be used to thermally sense the nanotopography of a surface. Previous reports show that cantilever nanotopography sensitivity can be increased by either modifying the cantilever design or by increasing the operating temperature of the cantilever. This article describes six-fold improvement to cantilever sensitivity by using control mechanisms to maintain either constant cantilever electrical resistance, cantilever dissipated power, or the voltage across the circuit. Topographical imaging was performed on a 20 nm tall silicon calibration grating under each of these control schemes. The topographies obtained by the laser-deflection and the thermal signal corresponding to each control mechanism were compared. The thermal nanotopography sensitivity is improved by as much as 570% by controlling cantilever resistance and 345% by controlling power supply to the cantilever. Overall, the topography sensitivity using heated cantilevers is 500 times greater than that using similarly sized piezoresistive cantilevers.
Keywords :
atomic force microscopy; calibration; cantilevers; elemental semiconductors; nanosensors; silicon; surface topography; temperature control; temperature sensors; Si; atomic force microscope cantilever; calibration grating; cantilever dissipated power; cantilever electrical resistance; cantilever nanotopography sensitivity; laser-deflection; nanotopography sensing; piezoresistive cantilever; six-fold improvement; size 20 nm; temperature control; thermal nanotopography sensitivity; thermal signal; topographical imaging;
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2010.5690947