REBULF technology for bulk silicon and SOI lateral high-voltage devices

Author

Zhang, Bo ; Cheng, Jianbing ; Qiao, Ming ; Li, Zhaoji

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

164

Lastpage

167

Abstract

Reduced Bulk Field (REBULF) technology is used in the design of lateral power devices to improve breakdown voltage. Since this technology was firstly presented in 2006, this technology has gained widespread attention amongst researchers and has shown to offer good performance in a variety of application domains, especially in bulk silicon and SOI. This paper aims to offer a compendious and timely review of the technology and some work of our lab on the application of this technology in bulk silicon and SOI.

Keywords

MIS devices; power integrated circuits; power semiconductor devices; semiconductor device breakdown; silicon-on-insulator; LDMOS design; REBULF technology; SOI lateral high-voltage devices; Si; breakdown voltage; bulk silicon; reduced bulk field technology; smart power integrated circuit; Breakdown voltage; Contacts; Electric breakdown; Laboratories; Power integrated circuits; Semiconductor thin films; Silicon; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734497

Filename

4734497