Title :
REBULF technology for bulk silicon and SOI lateral high-voltage devices
Author :
Zhang, Bo ; Cheng, Jianbing ; Qiao, Ming ; Li, Zhaoji
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Reduced Bulk Field (REBULF) technology is used in the design of lateral power devices to improve breakdown voltage. Since this technology was firstly presented in 2006, this technology has gained widespread attention amongst researchers and has shown to offer good performance in a variety of application domains, especially in bulk silicon and SOI. This paper aims to offer a compendious and timely review of the technology and some work of our lab on the application of this technology in bulk silicon and SOI.
Keywords :
MIS devices; power integrated circuits; power semiconductor devices; semiconductor device breakdown; silicon-on-insulator; LDMOS design; REBULF technology; SOI lateral high-voltage devices; Si; breakdown voltage; bulk silicon; reduced bulk field technology; smart power integrated circuit; Breakdown voltage; Contacts; Electric breakdown; Laboratories; Power integrated circuits; Semiconductor thin films; Silicon; Thin film devices;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734497
