DocumentCode
2142281
Title
A 10 bit 40 MHz ADC using 0.8 μm Bi-CMOS technology
Author
Tsugaru, Kazunori ; Sugimoto, Yasuhixu ; Noda, Makoto ; Iwai, Hiroshi ; Sasaki, Gen ; Suwa, Yoshito
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
1989
fDate
18-19 Sep 1989
Firstpage
48
Lastpage
51
Abstract
A 10-bit analog-to-digital converter applicable to digital video equipment and using 0.8-μm BiCMOS technology is discussed. In order to reduce power dissipation and chip size, a two-step parallel type conversion scheme is utilized. The 10-bit resolution has been realized at a maximum conversion rate of 40 MHz, power dissipation of 700 mW, and chip size of 4.1×4.8-mm2. A scheme that transforms coarse reference voltages to fine ladder resistors using buffer amplifiers has been used. As the emitter follower circuit can be used for the buffer amplifier, a small settling time is obtained. A subranging architecture has been adopted in which the full-scale range of fine ADC is consistent with the equivalent voltage to 1.5 LSB for coarse ADC. With this architecture, 10 bit resolution is not required for coarse ADC, and total resolution is decided by fine ADC
Keywords
BIMOS integrated circuits; analogue-digital conversion; video equipment; 0.8 micron; 10 bit; 10-bit resolution; 40 MHz; 700 mW; ADC; BiCMOS technology; buffer amplifiers; coarse reference voltages; digital video equipment; emitter follower circuit; fine ladder resistors; maximum conversion rate; power dissipation; subranging architecture; two-step parallel type conversion scheme; video A/D convertor; CMOS logic circuits; CMOS technology; Flip-flops; Inverters; Latches; Paper technology; Resistors; Switches; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1989.69458
Filename
69458
Link To Document