DocumentCode :
2142281
Title :
A 10 bit 40 MHz ADC using 0.8 μm Bi-CMOS technology
Author :
Tsugaru, Kazunori ; Sugimoto, Yasuhixu ; Noda, Makoto ; Iwai, Hiroshi ; Sasaki, Gen ; Suwa, Yoshito
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fYear :
1989
fDate :
18-19 Sep 1989
Firstpage :
48
Lastpage :
51
Abstract :
A 10-bit analog-to-digital converter applicable to digital video equipment and using 0.8-μm BiCMOS technology is discussed. In order to reduce power dissipation and chip size, a two-step parallel type conversion scheme is utilized. The 10-bit resolution has been realized at a maximum conversion rate of 40 MHz, power dissipation of 700 mW, and chip size of 4.1×4.8-mm2. A scheme that transforms coarse reference voltages to fine ladder resistors using buffer amplifiers has been used. As the emitter follower circuit can be used for the buffer amplifier, a small settling time is obtained. A subranging architecture has been adopted in which the full-scale range of fine ADC is consistent with the equivalent voltage to 1.5 LSB for coarse ADC. With this architecture, 10 bit resolution is not required for coarse ADC, and total resolution is decided by fine ADC
Keywords :
BIMOS integrated circuits; analogue-digital conversion; video equipment; 0.8 micron; 10 bit; 10-bit resolution; 40 MHz; 700 mW; ADC; BiCMOS technology; buffer amplifiers; coarse reference voltages; digital video equipment; emitter follower circuit; fine ladder resistors; maximum conversion rate; power dissipation; subranging architecture; two-step parallel type conversion scheme; video A/D convertor; CMOS logic circuits; CMOS technology; Flip-flops; Inverters; Latches; Paper technology; Resistors; Switches; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
Type :
conf
DOI :
10.1109/BIPOL.1989.69458
Filename :
69458
Link To Document :
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