Title :
On-state resistance improvement by partially slotted STI LDMOS transistor in 0.25-micron smart power technology
Author :
Su, R.Y. ; Chiang, P.Y. ; Gong, J. ; Huang, T.Y. ; Tsai, J.L. ; Liu, Mingo ; Chou, C.C.
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The improvement of on-state resistance with partially slotted STI (shallow trench isolation) for medium voltage power devices in an advanced 0.25 um BiCMOS-DMOS process is implemented. Experiment results show that our proposed device can reduce 20% RON without hurting breakdown voltage. The partially slotted STI structure avoids breakdown voltage to decrease and also shortens the drain current path due to a 3-dimentional electric field shaping. Careful design for slotted STI profile is needed to achieve the optimum RON-BV tradeoff performance.
Keywords :
BiCMOS integrated circuits; electric breakdown; power MOSFET; power integrated circuits; BiCMOS-DMOS process; breakdown voltage; drain current path; electric field shaping; on-state resistance; partially slotted STI LDMOS transistor; shallow trench isolation; size 0.25 mum; smart power technology; Automotive electronics; BiCMOS integrated circuits; Doping; Electric resistance; Implants; Isolation technology; Medium voltage; Motor drives; Power engineering and energy; Surface resistance;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734498
