• DocumentCode
    2142307
  • Title

    The multi-emitter Si/SiGe HBT for microwave power application

  • Author

    Zi-xu, Wang ; Dao-hong, Yang ; De-shu, Zou ; Chen, Shi ; Jian-xin, Chen ; Wei-Ming, Yang

  • Author_Institution
    Sch. of Phys. & Electron. Technol., Hubei Univ., Wuhan, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    The design of Si/SiGe HBT for high-frequency microwave power amplification was presented in this paper. The material profile structure of the device was designed. A comb liked structure with 6-fingered emitter was employed for the SiGe HBT. Then the device was fabricated by using the buried metal self-aligned double mesa process and high resistivity substrate in a 3 ¿m manufacture process line. The tested results indicate that the Si/SiGe power HBT reaches the parameters of ß=26, VBC¿10 V, ICM¿180 mA and fT¿3.2 GHz.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; microwave power amplifiers; silicon; 6-fingered emitter; Si-SiGe; buried metal; comb liked structure; high resistivity substrate; material profile structure; microwave power amplification; multiemitter HBT; power HBT; self-aligned double mesa process; Conductivity; Electrodes; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing processes; Silicon germanium; Sputter etching; Substrates; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734499
  • Filename
    4734499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2142307