Improved thermal stability in SiGe HBTs by emitter layout

Author

Dongyue, Jin ; Wanrong, Zhang ; Hongyun, Xie ; Ning, Hu ; Pei, Shen

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

168

Lastpage

171

Abstract

A new emitter layout in SiGe HBT is presented to improve the thermal stability. For comparison, a SiGe HBT with conventional layout is also fabricated. The thermal resistance and I-V characteristics of two types of HBTs at different biases and ambient temperature are measured and compared. Experimental results show that the new emitter layout is very effective in enhancing thermal stability over a wide range of operation and ambient temperatures. When compared with the old layout, the power level for thermal instability is increased by 35.91% for the HBT with new layout. In addition, the thermal resistance is also improved by 13.34%. Because of the improvement of thermal stability and heat dissipation capability, power SiGe HBT with the new layout can operate at higher power level and hence has higher power handling capability over a wide range of operation.

Keywords

Ge-Si alloys; cooling; heterojunction bipolar transistors; integrated circuit layout; thermal resistance; thermal stability; I-V characteristics; SiGe; emitter layout; heat dissipation capability; power HBT; thermal resistance; thermal stability; Doping; Electronic ballasts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature measurement; Thermal engineering; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734500

Filename

4734500