Title :
A Fermi Level Controlled High Voltage Transistor preventing subthreshold hump
Author :
Park, Byoung-Chul ; Lee, Sung-Young ; Chang, Dong-Ryul ; Bang, Kee-In ; Kim, Sung-Jun ; Yi, Sang-Bae ; Ung, Eun-Seung J.
Author_Institution :
Sch. of Semicond. Eng., Samsung Semicond. Inst. of Technol., Gyconggi-Do, South Korea
Abstract :
In High Voltage Transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT make bad effects on device characteristics. In this paper, we have presented the novel Fermi Level Controlled HVT (FCHVT) to simply eliminate hump effects.
Keywords :
Fermi level; power integrated circuits; power transistors; Fermi level controlled high voltage transistor; boron segregation; hump effect; low substrate doping concentration; parasitic charges; subthreshold region; Boron; Control systems; Electric variables; MOSFET circuits; Semiconductor device doping; Substrates; Temperature; Thermal stresses; Transistors; Voltage control; Boron Segregation; FCHVT; HV; High Voltage; Hump; STI;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734501
