Title :
Accurate Nonlinear Resistive FET Modeling for IMD Calculations
Author :
García, José A. ; Pedro, Jose C. ; Carvalho, Nuno B. ; Mediavilla, Angel ; Tazón, António
Author_Institution :
Depto. Ing. Comunicaciones, Universidad de Cantabria - Avda Los Castros s/n-39005 Santander - SPAIN.
Abstract :
This work discusses the nonlinear modeling procedures required for intermodulation distortion (IMD) calculations of MESFETs biased in the resistive (linear) region. An automatic full two-sided characterization of Ids(vgs, Vds) is compared against the previously published extraction of Ids(vds) in this problematic region. It is shown that this one-sided Taylor series extraction is insufficient for most applications of the FET in its triode zone, and thus an alternative method is proposed.
Keywords :
Intermodulation distortion; Intrusion detection; MESFETs; Microwave FETs; Microwave devices; Radio frequency; Switches; Taylor series; Telecommunications; Voltage control;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338163
