Double LDD concave (DLC) structure for sub-half micron MOSFET

Author

Sunouchi, K. ; Takato, H. ; Nitayama, A. ; Hieda, K. ; Horiguchi, F. ; Masuoka, F.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

226

Lastpage

229

Abstract

A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5 V supply voltage. This structure has an impurity profile of n/sup +/-n/sup -/-p/sup -/-p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1) high drain sustaining voltage, (2) a reduced short-channel effect, (3) high current drivability, and (4) high reliability. The high current drivability provides high-speed switching.<>

Keywords

insulated gate field effect transistors; semiconductor technology; 5 V; DLC MOSFET; characteristics; concave-structure MOSFET; double LDD concave structure; double lightly doped drain concave; drain sustaining voltage; high current drivability; high reliability; high-speed switching; impurity profile; n/sup +/-n/sup -/-p/sup -/-p structure; reduced short-channel effect; sub-half micron MOSFET; supply voltage; Etching; FETs; Fabrication; Impurities; MOSFET circuits; Silicon; Substrates; Threshold voltage; Ultra large scale integration; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32797

Filename

32797