New Lateral IGBT on partial membrane

A new SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles on partial membrane (UVLD PM SOI LIGBT) is proposed in this paper. Its silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane, resulting in an enhanced breakdown voltage. Moreover, combining uniform and variation in lateral doping profiles achieves a low specific on-resistance. The breakdown voltage increases by one time and the specific on-resistance reduces by 31.5% in comparison with that of conventional SOI LIGBT structure. In contrast to CamSemi device, the maximal temperature decreases and specific on-resistance greatly reduces for UVLD PM SOI LIGBT with the increase of Lb.