Investigation of the RESURF Dielectric Inserted (REDI) LDMOS as a novel silicon-based RF power device

In this paper, a novel power device named as RESURF Dielectric Inserted (REDI) LDMOS is put forward. It is fully compatible with standard CMOS technology, which can sharply reduce the cost. In this novel REDI LDMOS, a RESURF structure and a dielectric region are inserted at the suitable position of the drift region to reconstruct the electric field and the electric potential distributions of the channel region and the drift region, which can effectively reduce the peak electric field and increase the breakdown voltage. The impacts of key device parameters on REDI LDMOS behaviors are comprehensively studied with device simulation tools. The structural parameters are optimized to obtain acceptable high breakdown voltage (>10 V), excellent on-state behavior and high frequency performance (>10 GHz).