Title :
A research for BCD compatible technology
Author :
Zhang, Zhengyuan ; Feng, Zhicheng ; Li, Xiaogang ; Hu, Mingyu ; Zheng, Chun
Author_Institution :
Nat. Lab. of Analog Integrated Circuits, Chongqing, China
Abstract :
In this paper, focused on especial requirement of monolithic power IC, a BCD compatible technology was studied and built up by solving a series of key technical issues. Using the BCD process, NPN, N-type VDMOS, PMOS, NMOS devices are obtained. For NPN transistor, BVCEO is 25 V and ß is 50, for N-type VDMOS transistor, BVDS is 35 V and VT is 2.5 V, for PMOS transistor, BVDS is 15 V, and VT is -1.5 V, for NMOS transistor, BVDS is 14 V and VT is 0.8 V.
Keywords :
CMOS integrated circuits; power integrated circuits; BCD compatible technology; CMOS process; NMOS devices; NPN transistor; PMOS; VDMOS; bipolar process; monolithic power IC; voltage -1.5 V; voltage 0.8 V; voltage 14 V; voltage 15 V; voltage 2.5 V; voltage 25 V; voltage 35 V; Annealing; Boron; CMOS process; CMOS technology; Epitaxial layers; MOS devices; MOSFETs; Power integrated circuits; Silicon; Substrates; BCD; compatible technology; double-diffusion; monolithic power IC;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734506
