• DocumentCode
    2142615
  • Title

    The influence of high negative substrate pulse bias on bulk plasma density

  • Author

    Shuyu Zhang ; Xu Xu ; Rongqing Liang ; Kefu Liu

  • Author_Institution
    Inst. of Modern Phys., Fudan Univ., Shanghai, China
  • fYear
    2008
  • fDate
    6-11 July 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we have used a dual Langmuir probe system to locate the edge of sheath and studied the influence of high negative pulse bias on bulk plasma density. Bulk plasma density changes greatly with and without substrate bias, but is insensitive to different non-zero substrate bias. Pulse width and frequency has greater influence on bulk plasma density, but there is not a simple linear increase between them, inflexion is observed with longer pulse width and higher frequency. We use two competitive interaction mechanisms --ionization cross sections and the secondary electron emission to explain the phenomenon above.
  • Keywords
    Langmuir probes; electron emission; plasma boundary layers; plasma density; plasma immersion ion implantation; plasma sheaths; Langmuir probe system; bulk plasma density; competitive interaction mechanisms; frequency; inflexion; ionization cross sections; negative substrate pulse bias; nonzero substrate bias; pulse width; secondary electron emission; sheath edge; Coils; Current measurement; Dielectrics; Instruments; Plasma measurements; Plasmas; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Power Particle Beams (BEAMS), 2008 17th International Conference on
  • Conference_Location
    Xian
  • Type

    conf

  • Filename
    6202935