The influence of the source/drain-tie length in a novel self-aligned S/D tie SOI for improving self-heating

A self-aligned novel S/D tie SOI device is presented for the first time in the field of silicon on insulator technology. The new device having thick-body and body-passway is demonstrated to improve the self-heating effect and decrease the parasitic source/drain resistance. When the source/drain-tie length is too small or too big, the negative differential conductance behavior can be observed. It can be achieved that the lattice temperature of the new device is reduced 32% when compared with the two conventional SOI devices.