Title :
Fast method to identify the root cause for ILD Vbd fail
Author :
Gan, Z.H. ; Wu, Y.J. ; Zheng, K. ; Guo, R. ; Liao, C.C.
Author_Institution :
Logic Technol. Dev., Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
At the process development stage, the non-uniformity of the BEOL dielectric breakdown voltage (Vbd) in a wafer mapping is always observed. Such non-uniformity may be induced either by ¿interface-mode¿ or by ¿CD-mode¿. This paper provides a fast method to identify the root cause for ILD Vbd fail through analyzing the current-voltage (I-V) curves from the V-ramp test.
Keywords :
electric breakdown; semiconductor device metallisation; BEOL dielectric breakdown voltage; ILD fail; fast method; wafer mapping; Cathodes; Copper; Dielectric breakdown; Electron emission; Gallium nitride; Linearity; Plasma accelerators; Plasma chemistry; Silicon compounds; Testing;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734520
