Compact modeling of multiple-gate MOSFETs

This paper reviews recent development on compact modeling of multiple-gate MOSFETs. First, a core model based on the analytic potential solutions for the highly symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs has been presented. With the addition of quantum, short-channel effects, and capacitance formulations, the core model for DG MOSFETs has been expanded into a full-blown compact model which has subsequently been calibrated and validated by FinFET hardware. For application to other types of experimental multiple-gate MOSFETs developed, the DG and SG MOSFET models have been generalized to other less symmetric structures, including quadruple-gate, triple-gate, ¿-gate, and ¿-gate devices.