An analytical model for carrier recombination and generation lifetimes measurement in SOI MOSFET’s

In this paper, an analytical model is proposed to study the carrier recombination-generation (R-G) processes in silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET´s). The correlations of the carrier lifetimes and the external perturbation rates have been investigated to examine the applicability and accuracy of techniques for carrier lifetimes measurement in device characterization and modeling. The credibility of the proposed model is supported by the consistent experimental and simulation results.