Title :
Unified regional modeling approach to emerging multiple-gate/nanowire MOSFETs
Author :
Zhou, Xing ; See, Guan Huei ; Zhu, Guojun ; Lin, Shihuan ; Wei, Chengqing ; Zhang, Junbin
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper reviews the basic governing equations for a double-gate/gate-all-around (DG/GAA) MOSFET in a generic and unified description. Starting from generic Poisson solution and input voltage equation, a paradigm shift with ground-reference and source/drain by label is proposed, which is essential in formulating equations for DG FinFETs without body contact. The unified regional modeling (URM) approach is used for unified surface-potential solutions, and is applied to demonstrate Gummel symmetry in doped DG with partial to full-depletion operations.
Keywords :
MOSFET; Poisson equation; nanowires; semiconductor device models; DG FinFET; Gummel symmetry; double-gate MOSFET; gate-all-around MOSFET; generic Poisson solution; ground reference; input voltage equation; multiple-gate/nanowire MOSFET; source/drain; unified regional modeling; unified surface-potential solutions; Capacitance; Doping; FETs; FinFETs; Integrated circuit modeling; MOSFETs; Poisson equations; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734529
