Title :
A complete surface potential-based current-voltage and capacitance-voltage core model for undoped surrounding-gate MOSFETs
Author :
He, Jin ; Yan Song ; Liu, Feng ; Liu, Feilong ; Zhang, Lining ; Zhang, Jian ; Zhang, Xing
Author_Institution :
TSRC, Peking Univ., Beijing, China
Abstract :
A complete surface potential-based current-voltage and capacitance-voltage core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this paper. This model allows the current-voltage (IV) and capacitance-voltage (CV) characteristics to be adequately described by a single set of the equations in terms of the surface potential. The model is valid for all operation regions and predicted SRG-MOSFET¿s characteristics by the 3-D numerical simulation.
Keywords :
MOSFET; capacitance; semiconductor device models; surface potential; 3-D numerical simulation; cylindrical undoped surrounding-gate MOSFETs; noncharge-sheet approximation; surface potential-based capacitance-voltage core model; surface potential-based current-voltage model; Capacitance-voltage characteristics; Closed-form solution; Helium; Integral equations; MOSFETs; Numerical simulation; Physics; Poisson equations; Predictive models; Silicon; device physics; non-charge-sheet approximation; non-classical MOSFET; surface potential model; surrounding-gate MOSFETs;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734530
