• DocumentCode
    2143203
  • Title

    Influence of Layout and Packaging on the Temperature of GaAs Power PHEMTs

  • Author

    Marsetz, W. ; Dammann, M. ; Kawashima, H. ; Rüdiger, J. ; Matthes, B. ; Hülsmann, A. ; Schlechtweg, M.

  • Author_Institution
    Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, D-79108 Freiburg, Germany, Phone: +49-761-5159-641, Fax: +49-761-5159-565, E-mail: marsetz@iaf.fhg.de
  • Volume
    2
  • fYear
    1998
  • fDate
    Oct. 1998
  • Firstpage
    439
  • Lastpage
    442
  • Abstract
    The influence of device layout and packaging on transistor temperature was investigated. The operating temperatures of GaAs power PHEMTs were measured with integrated temperature sensors from 20 - 200°C with an accuracy of a few degrees. The measured data are in very good agreement with our three-dimensional simulation results. Thus, reliable prediction on the effect of packaging and layout details on device temperature is possible.
  • Keywords
    Gallium arsenide; PHEMTs; Packaging; Schottky diodes; Semiconductor device measurement; Temperature dependence; Temperature measurement; Temperature sensors; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1998. 28th European
  • Conference_Location
    Amsterdam, Netherlands
  • Type

    conf

  • DOI
    10.1109/EUMA.1998.338193
  • Filename
    4139248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2143203