Title :
HiSIM-HV: A compact model for simulation of high-voltage-MOSFET circuits
Author :
Mattausch, H.J. ; Kajiwara, T. ; Yokomichi, M. ; Sakuda, T. ; Oritsuki, Y. ; Miyake, M. ; Sadachika, N. ; Kikuchihara, H. ; Feldmann, U. ; Miura-Mattausch, M.
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
The high-voltage MOSFET model HiSIM-HV is based on the HiSIM (Hiroshima-university STARC IGFET Model) model for conventional bulk MOSFETs [1, 2] and features a consistent potential description across MOSFET channel and drift region. Symmetric and asymmetric device types are covered for up to several 100 V switching capability. Accurate scaling properties for channel and drift-region length as well as channel width are also provided.
Keywords :
MOS integrated circuits; power integrated circuits; semiconductor device models; HiSIM-HV; MOSFET channel; drift region; high-voltage-MOSFET circuits; Application software; Cellular networks; Circuit simulation; Construction industry; MOSFET circuits; Performance analysis; Poisson equations; Power MOSFET; Surface resistance; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734532
