Title :
High-voltage MOSFET modeling and simulation considerations
Author :
Ma, James ; Yang, Lianfeng
Author_Institution :
ProPlus Design Solutions Inc., San Jose, CA, USA
Abstract :
This paper gives a brief overview on key aspects of high-voltage (HV) MOSFET modeling and simulation applications in terms of the modeling approaches, model physics, model performance, model extraction and model simulator compatibility, etc. The HV MOSFET compact models under review include the commonly used proprietary models like Cadence level 101 and LDMOS, Synopsys level 66, and the new public-domain model HiSIM_HV.
Keywords :
MOSFET; electronic engineering computing; semiconductor device models; high-voltage MOSFET modeling; model extraction; model performance; model physics; model simulator compatibility; Application software; Circuit simulation; Computational modeling; Design engineering; Electronic mail; MOSFET circuits; Physics; Plasma displays; Robustness; SPICE;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734533
