Title :
The new analytical subthreshold behavior model for dual material gate (DMG) SOI MESFET
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaoshiung, Taiwan
Abstract :
Based on the exact resultant solution of two dimensional Poisson equation, a new analytical subthreshold behavior model consisting of two dimensional potential, threshold voltage and subthreshold swing for the dual material gate (DMG) SOI MESFETs is developed. The model is verified by the good agreement when compared with the numerical simulation of device simulator MEDICI. The model not only offers the physical insight into device physics but also provides the efficient device model for the circuit simulation.
Keywords :
MESFET circuits; Poisson equation; circuit simulation; silicon-on-insulator; analytical subthreshold behavior model; circuit simulation; device simulator MEDICI; dual material gate SOI MESFET; subthreshold swing; threshold voltage; two-dimensional Poisson equation; two-dimensional potential; Analytical models; Circuit simulation; Computational modeling; Logic devices; MESFETs; MOSFETs; Medical simulation; Poisson equations; Silicon on insulator technology; Threshold voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734535
