The new analytical subthreshold behavior model for dual material gate (DMG) SOI MESFET

Author

Chiang, T.K.

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Kaoshiung, Taiwan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

288

Lastpage

289

Abstract

Based on the exact resultant solution of two dimensional Poisson equation, a new analytical subthreshold behavior model consisting of two dimensional potential, threshold voltage and subthreshold swing for the dual material gate (DMG) SOI MESFETs is developed. The model is verified by the good agreement when compared with the numerical simulation of device simulator MEDICI. The model not only offers the physical insight into device physics but also provides the efficient device model for the circuit simulation.

Keywords

MESFET circuits; Poisson equation; circuit simulation; silicon-on-insulator; analytical subthreshold behavior model; circuit simulation; device simulator MEDICI; dual material gate SOI MESFET; subthreshold swing; threshold voltage; two-dimensional Poisson equation; two-dimensional potential; Analytical models; Circuit simulation; Computational modeling; Logic devices; MESFETs; MOSFETs; Medical simulation; Poisson equations; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734535

Filename

4734535