Title :
RF MOST modeling based on PSP
Author :
Lou, Li-heng ; Sun, Ling-Ling ; Liu, Jun
Author_Institution :
Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
An RF n-MOST model was developed based on PSP model, which is considered as one of standard surface potential based compact model for deep-submicron applications. The RF sub-circuit is presented after analyzing the structure and layout of a specific RF n-MOST, and the parasitic parameters extracted analytically. Validated in DC, AC small-signal, and large-signal analysis, it proves that an excellent agreement is achieved between simulated and measured results for IV characteristics, S-parameters up to 40 GHz, and power characteristics at 900 MHz.
Keywords :
CMOS integrated circuits; integrated circuit modelling; radiofrequency integrated circuits; PSP; RF MOST modeling; RF sub-circuit; deep-submicron applications; standard surface potential based compact model; Circuits and systems; Equivalent circuits; Fingers; Laboratories; Parasitic capacitance; Radio frequency; Semiconductor device modeling; Standards development; Sun; Topology;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734536
