DocumentCode :
2143447
Title :
An investigation of single- and multi-finger nMOSFETs for the output pin ESD protection in integrated circuits
Author :
Shen-Li Chen ; Guan-Jhong Chen ; Wu, B.-L. ; Chen, Po-Yin ; Chen, H.-H.
Author_Institution :
Dept. of Electron. Eng., Nat. United Univ., Taiwan
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
341
Lastpage :
344
Abstract :
This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type, which will be inflected the device high-current-injection behavior.
Keywords :
MOSFET; SPICE; electrostatic discharge; integrated circuits; technology CAD (electronics); ESD protection; Electro-Static Discharge zapping; HSpice; TCAD; high-current-injection; integrated circuits; multi-finger structures; nMOSFET; parasitic capacitor; singer-finger structures; Capacitance; Capacitors; Circuit simulation; Current distribution; Electrostatic discharge; Fault location; Fingers; MOSFET circuits; Pins; Protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4734541
Filename :
4734541
Link To Document :
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