An investigation of single- and multi-finger nMOSFETs for the output pin ESD protection in integrated circuits

Author

Shen-Li Chen ; Guan-Jhong Chen ; Wu, B.-L. ; Chen, Po-Yin ; Chen, H.-H.

Author_Institution

Dept. of Electron. Eng., Nat. United Univ., Taiwan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

341

Lastpage

344

Abstract

This work is referring to the nMOSFET singer-finger, multi-finger structures under the Electro-Static Discharge (ESD) zapping, and to evaluate the current distribution situations. By using the TCAD and HSpice, because of the internal parasitic resistance differences in each one finger, which can cause non-uniform turned on. Meanwhile, with different interior parasitic capacitor on each nMOSFET type, which will be inflected the device high-current-injection behavior.

Keywords

MOSFET; SPICE; electrostatic discharge; integrated circuits; technology CAD (electronics); ESD protection; Electro-Static Discharge zapping; HSpice; TCAD; high-current-injection; integrated circuits; multi-finger structures; nMOSFET; parasitic capacitor; singer-finger structures; Capacitance; Capacitors; Circuit simulation; Current distribution; Electrostatic discharge; Fault location; Fingers; MOSFET circuits; Pins; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734541

Filename

4734541