DocumentCode
2143525
Title
Low-Power Si-BJT L-Band Down-Converter Chip
Author
Kucera, Jakub J. ; Schmatz, Martin L. ; Bachtold, Werner
Author_Institution
ETH Zÿrich, Lab. for EM Fields and Microwave Electronics, Gloriastr.35, CH-8092 Zÿrich, Switzerland; FAX +41 1 632 11 98; Tel +41 1 632 55 51. Email: kucera@ifh.ee.ethz.ch
Volume
2
fYear
1998
fDate
Oct. 1998
Firstpage
515
Lastpage
519
Abstract
A monolithic L-band down converter consisting of a LNA, a double balanced mixer, a VCO and a prescaler has been fabricated on a semi-custom transistor array with a standard silicon bipolar foundry process. The receiver has a SSB noise figure of 3.5 dB, more than 20 dB conversion gain, a single-ended input, differential outputs and draws 5.5 mA from a 3 V power supply.
Keywords
Circuits; Energy consumption; Feedback; Gain; Impedance; L-band; Noise figure; Noise measurement; Semiconductor device measurement; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338205
Filename
4139260
Link To Document