Title :
Statistical variations in 32nm thin-body SOI devices and SRAM cells
Author :
Cheng, B. ; Roy, S. ; Brown, A. ; Millar, C. ; Asenov, A.
Author_Institution :
Dept. of Electron.&Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
Based on 3D statistical device simulation, the impacts of key statistical variability (SV) sources (in both individual and combined forms) on device characteristics are studied in detail for a 32 nm thin-body SOI technology. The corresponding impacts on SRAM cell stability are presented as well. The simulation results indicate that thin body architectures are not only resistant to random discreet dopant induced variation, but also less sensitive to length edge roughness induced variation.
Keywords :
SRAM chips; semiconductor devices; silicon-on-insulator; statistical analysis; 3D statistical device simulation; SRAM cell stability; edge roughness; key statistical variability; random discreet dopant induced variation; size 32 nm; statistical variations; thin-body SOI devices; Calibration; Data mining; Doping profiles; Immune system; MOSFETs; Random access memory; Resists; Silicon; Stability; Tin;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734546
