Title :
Monostable-bistable transition logic element (MOBILE) model for single-electron transistors
Author :
Wang, Ying ; Han, Weihua ; Yang, Xiang ; Chen, Jianjun ; Yang, Fuhua
Author_Institution :
Res. Center of Semicond. Integrated Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
The traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors (SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in IDS-VDS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE.
Keywords :
semiconductor device models; single electron transistors; monostable-bistable transition logic element; negative differential conductance; single-electron transistors; Analytical models; Circuits; Energy states; Fabrication; HEMTs; III-V semiconductor materials; Intrusion detection; Logic; Resonant tunneling devices; Single electron transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734547
