DocumentCode :
2143598
Title :
Modelig and Simulation of Hybrid RF Circuits Using a Versatile Compact Bondwire Model
Author :
Harm, A.O. ; Mouthaan, K. ; Aziz, E. ; Versleijen, M.
Author_Institution :
Discrete Semiconductors Nijmegen, Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands. Lex.Harm@nym.sc.philips.com
Volume :
2
fYear :
1998
fDate :
Oct. 1998
Firstpage :
529
Lastpage :
534
Abstract :
The application of a versatile bondwire model for simulating the RF behavior of hybrid circuits is described. The bondwire model calculates the effective inductance and skin effect losses of sets of mutually coupled bondwires. Within the frequency range of 0.2 - 3 GHz the usage and accuracy of the model is demonstrated by comparing the measured and simulated small signal behavior of one stage bipolar transistor amplifier circuits. Typically gains can be simulated within 0.5 db accuracy, resonance frequencies of matching networks that are tuned with bondwire inductances within 2 %.
Keywords :
Bipolar transistors; Bonding; Circuit simulation; Coupling circuits; Frequency measurement; Inductance; Mutual coupling; Radio frequency; Resonance; Skin effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
Type :
conf
DOI :
10.1109/EUMA.1998.338208
Filename :
4139263
Link To Document :
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