Title :
High power and high-longevity GaAs photoconductive semiconductor switches
Author :
Liu, Zheng ; Shi, Wei ; Li, Xiaolong ; Zhang, Zhenzhen
Author_Institution :
Appl. Phys. Dept., Xi´´an Univ. of Technol., Xi´´an, China
Abstract :
A 14mm photoconductive semiconductor switch (PCSS) is excited at 20kV/400A, and the longevity is up to 350 shots. After 350 shots, the dark resistances decreases, and the biased voltage can not be increased to 20 kV again. The breakdown mechanism and the cause of the dark resistances decrease of the PCSS is analyzed based on the breakdown characteristics.
Keywords :
III-V semiconductors; gallium arsenide; photoconducting switches; semiconductor device breakdown; PCSS; biased voltage; breakdown characteristics; breakdown mechanism; current 400 A; dark resistances; photoconductive semiconductor switches; size 14 mm; voltage 20 kV; Atomic beams; Electric breakdown; Laser modes; Materials;
Conference_Titel :
High Power Particle Beams (BEAMS), 2008 17th International Conference on
Conference_Location :
Xian
