Use of scalable Parametric Measurement Macro to improve semiconductor technology characterization and product test

Author

Bickford, Jeanne ; Habib, Nazmul ; Goss, John ; McMahon, Robert ; Joshi, Rajiv V. ; Kanj, Rouwaida N.

Author_Institution

IBM, Essex Junction, VT, USA

fYear

2010

fDate

22-24 March 2010

Firstpage

315

Lastpage

319

Abstract

Use of a Scaling Parametric Macro (SPM) provides more accurate product level environment parametric information than scribe line (Kerf) structures. This paper compares drive current (Ion) data obtained with the SPM macros to scribe line structure Ion measurements. SPM macros provide less variation than scribe line structures. Since SPM is small enough to be included in all products, the SPM macro provides improved Ion product screening.

Keywords

semiconductor device measurement; semiconductor device testing; Ion product screening; Kerf structures; SPM; drive current data; product level environment parametric information; product test; scalable parametric measurement macro; scaling parametric macro; scribe line structure Ion measurements; scribe line structures; semiconductor technology characterization; Current measurement; Electronic equipment testing; Monitoring; Phasor measurement units; Ring oscillators; Rivers; Sampling methods; Scanning probe microscopy; Semiconductor device measurement; Semiconductor device testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design (ISQED), 2010 11th International Symposium on

Conference_Location

San Jose, CA

ISSN

1948-3287

Print_ISBN

978-1-4244-6454-8

Type

conf

DOI

10.1109/ISQED.2010.5450445

Filename

5450445