Title :
Use of scalable Parametric Measurement Macro to improve semiconductor technology characterization and product test
Author :
Bickford, Jeanne ; Habib, Nazmul ; Goss, John ; McMahon, Robert ; Joshi, Rajiv V. ; Kanj, Rouwaida N.
Author_Institution :
IBM, Essex Junction, VT, USA
Abstract :
Use of a Scaling Parametric Macro (SPM) provides more accurate product level environment parametric information than scribe line (Kerf) structures. This paper compares drive current (Ion) data obtained with the SPM macros to scribe line structure Ion measurements. SPM macros provide less variation than scribe line structures. Since SPM is small enough to be included in all products, the SPM macro provides improved Ion product screening.
Keywords :
semiconductor device measurement; semiconductor device testing; Ion product screening; Kerf structures; SPM; drive current data; product level environment parametric information; product test; scalable parametric measurement macro; scaling parametric macro; scribe line structure Ion measurements; scribe line structures; semiconductor technology characterization; Current measurement; Electronic equipment testing; Monitoring; Phasor measurement units; Ring oscillators; Rivers; Sampling methods; Scanning probe microscopy; Semiconductor device measurement; Semiconductor device testing;
Conference_Titel :
Quality Electronic Design (ISQED), 2010 11th International Symposium on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-6454-8
DOI :
10.1109/ISQED.2010.5450445
