Title :
Simulation of time-dependent transport in nanoscaled devices
Author :
Chen, Zhidong ; Zhang, Jinyu ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A method for simulating time-dependent transport in nanoscaled devices is presented. The method is based on solving time-dependent Schrodinger equation using the method of finite difference time domain (FDTD). Poisson equation is solved self-consistently with Schrodinger equation. This method is demonstrated by simulations of time-dependent transport in a nanowire and gate-around carbon nanotube field-effect transistor (CNTFET). Transient effects, e.g., finite rising time, are explored in these devices.
Keywords :
Poisson equation; Schrodinger equation; field effect transistors; finite element analysis; nanoelectronics; nanotube devices; nanowires; semiconductor device models; transport processes; CNTFET; FDTD; Poisson equation; Schrodinger equation; finite difference time domain; gate-around carbon nanotube field-effect transistor; nanoscaled devices; nanowire; time-dependent transport; transient effects; Ballistic transport; CNTFETs; Current density; Finite difference methods; Nanoscale devices; Poisson equations; Schrodinger equation; Time domain analysis; Voltage; Wave functions;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734557
