Title :
A simple procedure to determine source/drain series resistance and effective channel length for advanced MOSFETs
Author :
Chang, Yang-Hua ; Cheng, Ying-Chieh ; Ho, Ching-Sung
Author_Institution :
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol., Taiwan
Abstract :
A simple procedure to determine source/drain series resistance and effective channel length has been developed for advanced MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 ¿m. The parameters extracted with this procedure have been validated by comparing calculated and measured I-V characteristics.
Keywords :
MOSFET; electrical resistivity; masks; I-V characteristics; MOSFETs; effective channel length; mask; size 0.185 mum; size 0.2 mum; size 0.23 mum; source-drain series resistance; Electrical resistance measurement; Implants; Length measurement; Lithography; MOSFETs; Maintenance engineering; Monitoring; Power engineering and energy; Threshold voltage; Transconductance;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734561
