Simulation and analysis of silicon guided-wave electro-optic modulators

Presents both electrical and optical simulations of Si guided-wave electro-optic modulators. The simulation starts with design of modulators using a 2D semiconductor process simulator. The electrical properties of the modulators are analyzed by a 2D device simulator. Thereafter, the simulated electrical parameters are converted into optical parameters by proper electro-optic coefficients. The optical simulations are performed with both finite-difference-time-domain (FDTD) and mode-propagation-by-Fourier-expansion (MPFE) methods. The advantages of combining and using these two algorithms together are better accuracy and capability of analyzing arbitrarily shaped and optically large structures. The technique is illustrated by simulation and analysis of a series of Si guided-wave electro-optic modulators.<>