• DocumentCode
    2144007
  • Title

    Directed Genetic algorithms for OTFT model parameter extraction

  • Author

    Garcia-Moreno, E. ; Iniguez, B. ; Picos, R.

  • Author_Institution
    GTE, Univ. of Balearic Islands, Palma, Spain
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    424
  • Lastpage
    427
  • Abstract
    An improvement on the parameter extraction technique for compact device models based on Genetic algorithms is presented. The use of fuzzy logic based rules to direct the evolution of the genetic algorithm enhances the convergence and the physical meaning of the parameters is preserved. Another advantage of this method is that the fuzzy rules can be applied just to a reduced set of model parameters. The parameter extraction procedure is applied to find the parameters in an OTFT model from a set of experimental data. Agreement between measured and modeled DC I-V characteristics is excellent. Moreover, the parameter values obtained with this procedure agree remarkably with the ones obtained by a direct extraction method.
  • Keywords
    fuzzy logic; genetic algorithms; organic field effect transistors; thin film transistors; DC I-V characteristics; OTFT model parameter extraction; fuzzy logic based rules; genetic algorithm; organic thin film transistor; Convergence; FETs; Fuzzy logic; Genetic algorithms; Optimization methods; Organic thin film transistors; Parameter extraction; Thin film transistors; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734565
  • Filename
    4734565