The development of integration-based methods to extract parameters of two-terminal device models

We present a historic overview of the initial motivating ideas, original foundations, and subsequent development, of integration-based methods which are currently used to extract semiconductor device model parameters, as well as to assess devices¿ and circuits¿ non- linearity. To illustrate these methods¿ capabilities, in this paper we review sample applications specifically focusing on two-terminal devices, such as non-ideal junctions, illuminated solar cells, and post-breakdown conduction through thin oxides. Additional applications of these integration-based extraction methods, pertaining to MOSFET models and harmonic distortion evaluation, are presented elsewhere in this conference.