Title :
2-D modeling of nanoscale multigate MOSFETs
Author :
Fjeldly, Tor A. ; Berli, H.
Author_Institution :
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Kjeller, Norway
Abstract :
Precise two-dimensional current and capacitance modeling of short-channel, nanoscale multigate MOSFETs is presented. The model covers a wide range of operating regimes, geometries and material combinations. The modeling in the subthreshold regime is based on conformal mapping techniques. In moderate to strong inversion, we obtain self-consistent results based on the 2-D Poisson¿s equation. The results are in excellent agreement with numerical simulations.
Keywords :
MOSFET; Poisson equation; SCF calculations; nanotechnology; semiconductor device models; 2-D Poisson¿s equation; capacitance modeling; conformal mapping techniques; self-consistent results; short-channel nanoscale multigate MOSFETs; two-dimensional current modeling; Conformal mapping; Electrodes; Electrostatics; Geometry; Insulation; Integral equations; MOSFETs; Numerical models; Numerical simulation; Poisson equations;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734571
