DocumentCode
2144222
Title
A fully integrated, Silicon Bipolar RF Power Amplifier for GSM, operating from a single 3 Volt Supply Voltage
Author
Visser, Henk ; van der Last, Rudolf ; Fric, Tomas ; Breunisse, Rainier ; Akhnoukh, Atef
Author_Institution
Philips Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands
Volume
2
fYear
1998
fDate
Oct. 1998
Firstpage
656
Lastpage
658
Abstract
In this article the design is discussed of a commercial available, 3.5Watt, very small size, RF power amplifier for GSM mobile phones. This amplifier is low cost, and does not require external components. This amplifier is realized with silicon MMIC in a new RF-IC process. on a ceramic substrate. It operates from a single 3Volt-power supply.
Keywords
Ceramics; Costs; GSM; MMICs; Mobile handsets; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338232
Filename
4139287
Link To Document