DocumentCode :
2144222
Title :
A fully integrated, Silicon Bipolar RF Power Amplifier for GSM, operating from a single 3 Volt Supply Voltage
Author :
Visser, Henk ; van der Last, Rudolf ; Fric, Tomas ; Breunisse, Rainier ; Akhnoukh, Atef
Author_Institution :
Philips Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands
Volume :
2
fYear :
1998
fDate :
Oct. 1998
Firstpage :
656
Lastpage :
658
Abstract :
In this article the design is discussed of a commercial available, 3.5Watt, very small size, RF power amplifier for GSM mobile phones. This amplifier is low cost, and does not require external components. This amplifier is realized with silicon MMIC in a new RF-IC process. on a ceramic substrate. It operates from a single 3Volt-power supply.
Keywords :
Ceramics; Costs; GSM; MMICs; Mobile handsets; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
Type :
conf
DOI :
10.1109/EUMA.1998.338232
Filename :
4139287
Link To Document :
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