Title :
Design Limitations for Passive Microwave Components in Silicon MMICs
Author :
Gevorgian, S. ; Jakobson, H. ; Lewin, T. ; Kollberg, E.
Author_Institution :
Department of Microelectronics, Chalmers University of Technology, Gothenburg, 41296, Sweden. Tel. +46(31) 7721727, FAX +46(31) 164513; Core Unit Research Center, Ericsson Microwave Systems, Mölndal, Sweden. Tel. +46(31) 7473294, FAX +46(31) 747 3411, em
Abstract :
Dielectric properties of Silicon are studied in a wide frequency-resistivity range. It is shown that the complex dielectric constant of Silicon is strongly modified due to the free charge carrier absorption. In n-type Silicon the real part of the dielectric constant is negative for resistivity below 0.002 Ohm m. Quasi-TEM and fundamental slow waves are discussed in the resistivity/frequency domain.
Keywords :
Conductivity; Dielectric constant; Dielectric losses; Dielectric substrates; MMICs; Optical scattering; Plasma properties; Plasma waves; Resonant frequency; Silicon;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338233
