Electrothermal coupling and threshold-switching simulation study on phase change memory (PCM) Cell

Author

Wei, Yiqun ; Liu, Chi ; Lin, Xinnan ; He, Jin ; Zhang, Xing ; Chan, Mansun

Author_Institution

Shenzhen Grad. Sch., Integrated Technol. Group, Peking Univ., Peking, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

512

Lastpage

515

Abstract

As one of the candidates of the next generation non-volatile memory (NVM), phase change memory(PCM) has been paid more attention. But there are many open issue in simulation and phase-change mechanism. In this work, an electrothermal simulation is implemented, which can provide an evaluation method for PCM geometry and scaling design. At the time, a threshold-switching mechanism is discussed. A threshold-switching curve is achieved using device simulator, results show that this mechanism can explain the threshold-switching phenomenon.

Keywords

logic design; logic simulation; phase change memories; PCM cell; electrothermal coupling; nonvolatile memory; phase change memory; scaling design; threshold-switching simulation mechanism; Amorphous materials; Crystallization; Electrothermal effects; Equations; Geometry; Nonvolatile memory; Phase change materials; Phase change memory; Switches; Temperature; Electrothermal; PCM; Simulation; Threshold-switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734576

Filename

4734576