Title :
A new MOS varactor BSIM4 model with temperature effect
Author :
Chen, Zhanfei ; Wong, Waisum ; Cheng, Jenhao ; He, Danmy
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
In this paper we present a new BSIM4-based RF MOS varactor model. The new model accurately models the varactor behavioral for the submicron MOS when the gate leakage effect needs to included. The model also accounts for the temperature effect when parasitic resistance and capacitance are considered in the Q-factor extraction.
Keywords :
MOSFET; varactors; MOSFET; RF MOS varactor; CMOS technology; Equivalent circuits; Gate leakage; Integrated circuit modeling; Probes; Radio frequency; Resistors; Semiconductor device modeling; Temperature; Varactors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734580
