Title :
High-voltage thin film transistors for large area microelectronics
Author :
Hack, M. ; Chiang, A. ; Huang, T.Y. ; Lewis, A.G. ; Martin, R.A. ; Tuan, H. ; Wu, I.W. ; Yap, P.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
Novel amorphous and polycrystalline silicon high-voltage thin-film transistors (TFTs) have been fabricated for use in large-area (in excess of 30 cm*30 cm) microelectronics. These devices are important for linear pagewide input and output devices as well as two-dimensional displays. The authors describe the improved device configuration and contrast this high-performance polycrystalline silicon TFT with an amorphous silicon high-voltage TFT which has lower drive current but is easier to fabricate.<>
Keywords :
elemental semiconductors; silicon; thin film transistors; 30 cm; device configuration; high voltage TFTs; high-voltage thin-film transistors; large area microelectronics; linear pagewide input; polycrystalline Si; two-dimensional displays; Amorphous materials; Amorphous silicon; Computer hacking; Dielectrics; Implants; Low voltage; Microelectronics; Thin film transistors; Threshold voltage; Two dimensional displays;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32804
